Memoria flash, Paralelo W29N04GVBIAF 4Gbit, 512M x 8 bit, 25μs, VFBGA, 63 pines

Density : 4Gbit (Single chip solution) Vcc : 2.7V to 3.6V Bus width : x8 Operating temperature Industrial: -40°C to 85°C Single-Level Cell (SLC) technology. Organization Density: 4G-bit/512M-byte Page size 2,112 bytes (2048 + 64 bytes) Block size 64 pages (128K + 4K bytes) Highest Performance Read performance (Max.) Random read: 25us Sequential read cycle: 25ns Write Erase performance Page program time: 250us(typ.) Block erase time: 2ms(typ.) Endurance 100,000 Erase/Program Cycles(1) 10-years data retention Command set Standard NAND command set Additional command support Sequential Cache Read Random Cache Read Cache Program Copy Back Two-plane operation Contact Winbond for OTP feature Contact Winbond for Block Lock feature Lowest power consumption Read: 25mA(typ.) Program/Erase: 25mA(typ.) CMOS standby: 10uA(typ.) Space Efficient Packaging 48-pin standard TSOP1 63-ball VFBGA4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.Bus Width: x8 Random Read: 25us Page Program Time: 250us(typ.) Block Erase Time: 2ms(typ.) Support OTP Memory Area