Optoacoplador onsemi FOD de 1 canal, Vf= 1.4V, Viso= 5 kVrms, OUT. Fototransistor, mont. superficial, encapsulado SMT,

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.AC Input Response (FOD814) Current Transfer Ratio in Selected Groups: FOD814: 20-300% FOD814A: 50-150% FOD817: 50-600% FOD817A: 80-160% FOD817B: 130-260% FOD817C: 200-400% FOD817D: 300-600% Minimum BVCEO of 70 V Guaranteed Applications AC-DC Merchant Power Supply Consumer Appliances Industrial Motor