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| N.º art.:
3318E-1867190 N.º fabricante:
MUN5235T1G EAN/GTIN:
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| This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable These Devices are PbFree, Halogen Free/BFR Free Más información: | | Tipo de Transistor: | NPN | Corriente DC Máxima del Colector: | 100 mA | Tensión Máxima Colector-Emisor: | 50 V | Tipo de Encapsulado: | SOT-323 (SC-70) | Tipo de Montaje: | Montaje superficial | Disipación de Potencia Máxima: | 310 mW | Configuración de transistor: | Simple | Conteo de Pines: | 3 | Número de Elementos por Chip: | 1 | Resistencia base-emisor: | 47kΩ | Dimensiones: | 2.2 x 1.35 x 0.9mm | Temperatura Máxima de Funcionamiento: | +150 °C | Resistencia de Entrada Típica: | 2.2 kΩ | Relación de Resistencia Típica: | 0.047 | Configuración: | Único |
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| Otros conceptos de búsqueda: Transistor SMD, Transistores SMD, Transistores, Transistor, transistor smd, 1867190, Semiconductores, Semiconductores Discretos, Transistores Bipolares, onsemi, MUN5235T1G |
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