Fotodiodo de silicio ON Semiconductor C, luz visible, mont. superficial, encapsulado SMT de 4 pines

>40% PDE at 420 nm, and extended sensitivity to 300 nm for improved UV sensitivity Ultra-low dark count rates of 30 kHz/mm2 Exceptional breakdown voltage uniformity of ±250 mV over all C-Series products Temperature stability of 21.5 mV/°C Bias voltage of <30 V Ultra-fast rise times of 300 ps with 600 ps pulse width from a unique ’fast output’ terminal 1 mm, 3 mm, and 6 mm sensor sizes Solid state alternative to the legacy PMT for a wide range of applications High gain of 106 leads to single photon sensitivity Best Vbr uniformity in the industry Compact, robust packaging Evaluation boards with either SMA connectors or pins are available for easy evaluation Applications Medical Imaging Hazard & Threat 3D Ranging & Sensing Biophotonics & Sciences High Energy Physics