AEC-Q100 Memoria FRAM Infineon CY15B064J-SXE, 8 pines, SOIC, Serie I2C, 64kbit, 8K x 8 bit, 3000ns, 2 V a 3.6 V

64-Kbit ferro electric random access memory (F-RAM) logically organized as 8K x 8 High-endurance 10 trillion (1013) read/writes 121-year data retention (See the Data Retention and Endurance table) No Delay™ writes Advanced high-reliability ferro electric process Fast 2-wire Serial interface (I2C) Up to 1-MHz frequency Direct hardware replacement for serial (I2C) EEPROM Supports legacy timings for 100 kHz and 400 kHz Low power consumption 120 A (typ) active current at 100 kHz 6 A (typ) standby current Voltage operation: VDD = 3.0 V to 3.6 V Automotive-E temperature: –40 C to +125 C 8-pin small outline integrated circuit (SOIC) package