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| N.º art.:
3318E-1811869 N.º fabricante:
FOD8314R2 EAN/GTIN:
Sin datos |
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| FOD8314T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation 1.0 A Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail 20 kV/μs Minimum Common Mode Rejection Wide Supply Voltage Range: 15 V to 30 V Fast Switching Speed Over Full Operating Temperature Range – 500 ns Maximum Propagation Delay – 300 ns Maximum Pulse Width Distortion Under-Voltage Lockout (UVLO) with Hysteresis Extended Industrial Temperate Range: -40°C to 100°C AC and Brushless DC Motor Drives Industrial Inverter Uninterruptible Power Supply Induction Heating Isolated IGBT/Power MOSFET Gate Drive Más información: | | Máxima Tensión Directa: | 1.8V | Tensión de Aislamiento: | 5000V | Tiempo de Subida: | 60ns | Conteo de Pines: | 6 | Temperatura de Funcionamiento Mínima: | -40°C | Temperatura de Funcionamiento Máxima: | +100°C | Longitud: | 6.81mm | Anchura: | 4.5mm | Profundidad: | 3.18mm | Dimensiones: | 6.81 x 4.5 x 3.18mm | Rango de Temperatura de Funcionamiento: | -40 → +100°C | -40 → +100 °C | Serie: | FOD8314 | Tipo de Salida: | Current |
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| Otros conceptos de búsqueda: 1811869, Displays y Optoelectrónica, Optoacopladores y Fotodetectores, Optoacopladores, onsemi, FOD8314R2 |
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