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| N.º art.:
3318E-1811593 N.º fabricante:
S25FL128LAGNFI010 EAN/GTIN:
5059045716167 |
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| 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K x 8 High-endurance 10 trillion (1014) read/writes 121-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Up to 33 MHz frequency Direct hardware replacement for serial flash and EEPROM Supports SPI mode 0 (0, 0) and mode 3 (1, 1) Sophisticated write protection scheme Hardware protection using the Write Protect (WP) pin Software protection using Write Disable instruction Software block protection for 1/4, 1/2, or entire array Device ID Manufacturer ID and Product ID Low power consumption 3 mA active current at 33 MHz 400 A standby current 12 A sleep mode current Low-voltage operation: VDD = 2.0 V to 3.6 V Extended temperature: –40 °C to +105 °C 8-pin thin dual flat no leads (DFN) package Más información: | | Tamaño de la Memoria: | 128Mbit | Tipo de Interfaz: | Quad-SPI | Tipo de Encapsulado: | WSON | Conteo de Pines: | 8 | Organización: | 16M x 8 bit | Tipo de Montaje: | Montaje superficial | Tipo de Célula: | NI | Tensión de Alimentación de Funcionamiento Mínima: | 2.7 V | Tensión de Alimentación Máxima de Funcionamiento: | 3.6 V | Organización de Bloques: | Simétrico | Longitud: | 5.28mm | Altura: | 1.9mm | Ancho: | 5.28mm | Dimensiones: | 5.28 x 5.28 x 1.9mm | Estándar de automoción: | AEC-Q100 |
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| Otros conceptos de búsqueda: memoria eeprom, 1811593, Semiconductores, Chips de Memoria, Memorias Flash, Infineon, S25FL128LAGNFI010 |
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