Memoria FRAM Infineon CY15B104Q-LHXI, 8 pines, DFN, Serie SPI, 4Mbit, 512 kB x 8, 16ns, 2 V a 3.6 V

4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Up to 40-MHz frequency Direct hardware replacement for serial flash and EEPROM Supports SPI mode 0 (0, 0) and mode 3 (1, 1) Sophisticated write protection scheme Hardware protection using the Write Protect (WP) pin Software protection using Write Disable instruction Software block protection for 1/4, 1/2, or entire array Device ID Manufacturer ID and Product ID Low power consumption 300 A active current at 1 MHz 100 A (typ) standby current 3 A (typ) sleep mode current Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C Packages 8-pin small outline integrated circuit (SOIC) package 8-pin thin dual flat no leads (TDFN) package